The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Sep. 02, 2011
Wei-chih Peng, Hsinchu, TW;
Min-hsun Hsieh, Hsinchu, TW;
Ming-chi Hsu, Hsinchu, TW;
Wei-yu Yen, Hsinchu, TW;
Chun-kai Wang, Hsinchu, TW;
Yen-chih Chen, Hsinchu, TW;
Schang-jing Hon, Hsinchu, TW;
Hsin-ying Wang, Hsinchu, TW;
Chien-kai Chung, Hsinchu, TW;
Wei-Chih Peng, Hsinchu, TW;
Min-Hsun Hsieh, Hsinchu, TW;
Ming-Chi Hsu, Hsinchu, TW;
Wei-Yu Yen, Hsinchu, TW;
Chun-Kai Wang, Hsinchu, TW;
Yen-Chih Chen, Hsinchu, TW;
Schang-Jing Hon, Hsinchu, TW;
Hsin-Ying Wang, Hsinchu, TW;
Chien-Kai Chung, Hsinchu, TW;
Epistar Corporation, Hsinchu, TW;
Abstract
An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.