The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Jan. 27, 2009
Koji Okuno, Aichi-ken, JP;
Shugo Nitta, Aichi-ken, JP;
Yoshiki Saito, Aichi-ken, JP;
Yasuhisa Ushida, Aichi-ken, JP;
Naoyuki Nakada, Kiyosu, JP;
Shinya Boyama, Kiyosu, JP;
Koji Okuno, Aichi-ken, JP;
Shugo Nitta, Aichi-ken, JP;
Yoshiki Saito, Aichi-ken, JP;
Yasuhisa Ushida, Aichi-ken, JP;
Naoyuki Nakada, Kiyosu, JP;
Shinya Boyama, Kiyosu, JP;
Toyoda Gosei Co., Ltd., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes. A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.