The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Dec. 14, 2012
Nadia Ben Mohamed, Echirolles, FR;
Ta-ko Chuang, Painted Post, NY (US);
Jeffrey Scott Cites, Horseheads, NY (US);
Daniel Delprat, Crolles, FR;
Alex Usenko, Painted Post, NY (US);
Nadia Ben Mohamed, Echirolles, FR;
Ta-Ko Chuang, Painted Post, NY (US);
Jeffrey Scott Cites, Horseheads, NY (US);
Daniel Delprat, Crolles, FR;
Alex Usenko, Painted Post, NY (US);
Corning Incorporated, Corning, NY (US);
S.O.I TEC Silicon on Insulator Technologies, Bernin, FR;
Abstract
A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.