The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Feb. 28, 2007
Kangguo Cheng, Beacon, NY (US);
Louis Lu-chen Hsu, Fishkill, NY (US);
Jack Allan Mandelman, Flatrock, NC (US);
John Edward Sheets, Ii, Zumbrota, MN (US);
Kangguo Cheng, Beacon, NY (US);
Louis Lu-Chen Hsu, Fishkill, NY (US);
Jack Allan Mandelman, Flatrock, NC (US);
John Edward Sheets, II, Zumbrota, MN (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the invention provide a relatively uniform width fin in a Fin Field Effect Transistors (FinFETs) and apparatus and methods for forming the same. A fin structure may be formed such that the surface of a sidewall portion of the fin structure is normal to a first crystallographic direction. Tapered regions at the end of the fin structure may be normal to a second crystal direction. A crystallographic dependent etch may be performed on the fin structure. The crystallographic dependent etch may remove material from portions of the fin normal to the second crystal direction relatively faster, thereby resulting in a relatively uniform width fin structure.