The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Feb. 19, 2010
Hee-woo Rhee, Seoul, KR;
Hyun Sang Choi, Seoul, KR;
Seong-gyu Min, Seoul, KR;
Bum Suk Kim, Seoul, KR;
BO Ra Shin, Seoul, KR;
Hee-Woo Rhee, Seoul, KR;
Hyun Sang Choi, Seoul, KR;
Seong-Gyu Min, Seoul, KR;
Bum Suk Kim, Seoul, KR;
Bo ra Shin, Seoul, KR;
Abstract
The present invention relates to a production method for an ultra-low-dielectric-constant film, in which ratios are optimised in a mixed solution having a matrix consisting of a poly (alkyl silsesquioxane) copolymer and a porogen represented by Chemical formula 1, and in which this mixed solution is subjected to ultraviolet curing during a heat treatment. The ultra-low-dieletric-constant film of the present invention can be used as an intermediate insulating film for next generation semiconductors instead of the SiO2 dielectric films currently used, since pores of from 1 to 3 nm are uniformly distributed at from 10 to 30% and a very high degree of mechanical elasticity of from 10.5 to 19 GPa is achieved at a low dielectric constant from 2.12 to 2.4.