The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2013

Filed:

Jan. 30, 2009
Applicants:

Mikikazu Shimizu, Komaki, JP;

Tomohiko Akatsuka, Inchinomiya, JP;

Kazuya Sumita, Kakamigahara, JP;

Inventors:

Mikikazu Shimizu, Komaki, JP;

Tomohiko Akatsuka, Inchinomiya, JP;

Kazuya Sumita, Kakamigahara, JP;

Assignee:

Fujimi Incorporated, Kiyosu-Shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 13/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains abrasive grains and an anionic surfactant having a monooxyethylene group or a polyoxyethylene group and has a pH of 9 to 12. If the anionic surfactant contained in the polishing composition has a polyoxyethylene group, the number of repeating oxyethylene units in the polyoxyethylene group is preferably 2 to 8. The anionic surfactant contained in the polishing composition can be an anionic surfactant that has a phosphate group, a carboxy group, or a sulfo group as well as a monooxyethylene group or a polyoxyethylene group. The content of the anionic surfactant in the polishing composition is preferably 20 to 500 ppm.


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