The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jan. 28, 2011
Jonathan H. Huynh, San Jose, CA (US);
Feng Pan, Fremont, CA (US);
Viswakiran Popuri, Milpitas, CA (US);
Marco Cazzaniga, Palo Alto, CA (US);
Jonathan H. Huynh, San Jose, CA (US);
Feng Pan, Fremont, CA (US);
Viswakiran Popuri, Milpitas, CA (US);
Marco Cazzaniga, Palo Alto, CA (US);
SanDisk Technologies Inc., Plano, TX (US);
Abstract
Techniques and corresponding circuitry are presented for the detection of wordline leakage in a memory array. In an exemplary embodiment, a capacitive voltage divider is used to translate the high voltage drop to low voltage drop that can be compared with a reference voltage to determine the voltage drop due to leakage. An on-chip self calibration method can help assure the accuracy of this technique for detecting leakage limit. In other embodiments, the current drawn by a reference array, where a high voltage is applied to the array with all wordlines non-selected, is compared to the current drawn by an array where the high voltage is applied and one or more selected wordlines. In these current based embodiments, the reference array can be a different array, or the same array as that one selected for testing.