The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jul. 10, 2012
Lucien Lombard, Grenoble, FR;
Ioan Lucian Prejbeanu, Seyssinet Pariset, FR;
Lucien Lombard, Grenoble, FR;
Ioan Lucian Prejbeanu, Seyssinet Pariset, FR;
Crocus-Technology SA, Grenoble, FR;
Abstract
The present disclosure concerns a magnetic random access memory MRAM cell comprising a tunnel magnetic junction formed from a first ferromagnetic layer, a second ferromagnetic layer having a second magnetization that can be oriented relative to an anisotropy axis of the second ferromagnetic layer at a predetermined high temperature threshold, and a tunnel barrier; a first current line extending along a first direction and in communication with the magnetic tunnel junction; the first current line being configured to provide an magnetic field for orienting the second magnetization when carrying a field current; wherein the MRAM cell is configured with respect to the first current line such that when providing the magnetic field, at least a component of the magnetic field is substantially perpendicular to said anisotropy axis. The MRAM cell has an improved switching efficiency, lower power consumption and improved dispersion of the switching field compared to conventional MRAM cells.