The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Sep. 01, 2010
Hong-bae Park, Seoul, KR;
Sug-hun Hong, Yongin-si, KR;
Sang-jin Hyun, Suwon-si, KR;
Hoon-ju NA, Hwaseong-si, KR;
Hye-lan Lee, Hwaseong-si, KR;
Hyung-seok Hong, Ansan-si, KR;
Hong-bae Park, Seoul, KR;
Sug-hun Hong, Yongin-si, KR;
Sang-jin Hyun, Suwon-si, KR;
Hoon-ju Na, Hwaseong-si, KR;
Hye-lan Lee, Hwaseong-si, KR;
Hyung-seok Hong, Ansan-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A complementary metal oxide semiconductor (CMOS) device including: a semiconductor substrate including a NMOS region and a PMOS region; a NMOS metal gate stack structure on the NMOS region and including a first high dielectric layer, a first barrier metal gate on the first high dielectric layer and including a metal oxide nitride layer, and a first metal gate on the first barrier metal gate; and a PMOS metal gate stack structure on the PMOS region and including a second high dielectric layer, a second barrier metal gate on the second high dielectric layer and including a metal oxide nitride layer, and a second metal gate on the second barrier metal gate.