The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jun. 30, 2009
Shuhei Nakata, Tokyo, JP;
Shoyu Watanabe, Tokyo, JP;
Kenichi Otsuka, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Shoyu Watanabe, Tokyo, JP;
Kenichi Otsuka, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A structure of a power semiconductor device, in which a P-well region having a large area and a gate electrode are opposed to each other through a field oxide film having a larger thickness than that of a gate insulating film such that the P-well region having a large area and the gate electrode are not opposed to each other through the gate insulating film, or the gate electrode is not provided above the gate insulating film that includes the P-well region having a large area therebelow.