The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Sep. 01, 2010
Kazuhide Abe, Kanagawa, JP;
Tadahiro Sasaki, Tokyo, JP;
Atsuko Iida, Kanagawa, JP;
Kazuhiko Itaya, Kanagawa, JP;
Kazuhide Abe, Kanagawa, JP;
Tadahiro Sasaki, Tokyo, JP;
Atsuko Iida, Kanagawa, JP;
Kazuhiko Itaya, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an embodiment, the present invention provides a semiconductor device that is easily integrated with other electronic circuits and functions as an oscillator with high frequency accuracy. The semiconductor device includes: a semiconductor substrate; an element region; an element isolation region that surrounds the element region; a field effect transistor including a gate electrode that is formed on the element region, source and drain regions, and a channel region that is interposed between the source region and the drain region; gate, source, and drain terminals that are used to apply a voltage to the gate electrode, the source region, and the drain region, respectively; and an output terminal that is electrically connected to the channel region. When the threshold voltage of the field effect transistor is V, a gate voltage Vapplied between the source terminal and the gate terminal and a drain voltage Vapplied between the source terminal and the drain terminal satisfy the following relationship: V<V<V+V. Also, sn oscillating signal is output from the output terminal.