The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Sep. 02, 2011
Tomoyasu Kakegawa, Tokyo, JP;
Isamu Asano, Tokyo, JP;
Tsuyoshi Kawagoe, Tokyo, JP;
Hiromi Sasaoka, Tokyo, JP;
Naoya Higano, Tokyo, JP;
Yuta Watanabe, Tokyo, JP;
Tomoyasu Kakegawa, Tokyo, JP;
Isamu Asano, Tokyo, JP;
Tsuyoshi Kawagoe, Tokyo, JP;
Hiromi Sasaoka, Tokyo, JP;
Naoya Higano, Tokyo, JP;
Yuta Watanabe, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A semiconductor device may include, but is not limited to: a first insulating film; a second insulating film over the first insulating film; a first memory structure between the first and second insulating films; and a third insulating film between the first and second insulating films. The first memory structure may include, but is not limited to: a heater electrode; and a phase-change memory element between the heater electrode and the second insulating film. The phase-change memory element contacts the heater electrode. The third insulating film covers at least a side surface of the phase-change memory element. Empty space is positioned adjacent to at least one of the heater electrode and the third insulating film.