The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Aug. 18, 2011
Mei-hsuan Lin, Tainan, TW;
Chih-hsun Lin, Tainan, TW;
Chih-kang Chao, Tainan, TW;
Ling-sung Wang, Tainan, TW;
Mei-Hsuan Lin, Tainan, TW;
Chih-Hsun Lin, Tainan, TW;
Chih-Kang Chao, Tainan, TW;
Ling-Sung Wang, Tainan, TW;
Abstract
The present application discloses a method of manufacturing a semiconductor structure. According to at least one embodiment, a first etch stop layer is formed over a conductive feature and a substrate, and the conductive feature is positioned over the substrate. A second etch stop layer is formed over the first etch stop layer. A first etch is performed to form an opening in the second etch stop layer, and the opening exposes a portion of the first etch stop layer. A second etch is performed to extend the opening downwardly by removing a portion of the exposed first etch stop layer, and the extended opening exposes a portion of the conductive feature.