The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jun. 17, 2011
Chun-wei Hsu, Taipei, TW;
Po-cheng Huang, Chiayi, TW;
Teng-chun Tsai, Tainan, TW;
Chia-lin Hsu, Tainan, TW;
Chih-hsun Lin, Pingtung County, TW;
Chang-hung Kung, Kaohsiung, TW;
Chia-his Chen, Kaohsiung, TW;
Yen-ming Chen, New Taipei, TW;
Chun-Wei Hsu, Taipei, TW;
Po-Cheng Huang, Chiayi, TW;
Teng-Chun Tsai, Tainan, TW;
Chia-Lin Hsu, Tainan, TW;
Chih-Hsun Lin, Pingtung County, TW;
Chang-Hung Kung, Kaohsiung, TW;
Chia-His Chen, Kaohsiung, TW;
Yen-Ming Chen, New Taipei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A poly opening polish process includes the following steps. A semi-finished semiconductor component is provided. The semi-finished semiconductor component includes a substrate, a gate disposed on the substrate, and a dielectric layer disposed on the substrate and covering the gate. A first polishing process is applied onto the dielectric layer. A second polishing process is applied to the gate. The second polishing process utilizes a wetting solution including a water soluble polymer surfactant, an alkaline compound and water. The poly opening polish process can effectively remove an oxide residue formed in the chemical mechanical polish, thereby improving the performance of the integrated circuit and reducing the production cost of the integrated circuit.