The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Mar. 01, 2012
Sunfei Fang, LaGrangeville, NY (US);
Brian J. Greene, Wappingers Falls, NY (US);
Effendi Leobandung, Wappingers Falls, NY (US);
Qingqing Liang, Fishkill, NY (US);
Edward P. Maciejewski, Wappingers Falls, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Sunfei Fang, LaGrangeville, NY (US);
Brian J. Greene, Wappingers Falls, NY (US);
Effendi Leobandung, Wappingers Falls, NY (US);
Qingqing Liang, Fishkill, NY (US);
Edward P. Maciejewski, Wappingers Falls, NY (US);
Yanfeng Wang, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Threshold voltage controlled semiconductor structures are provided in which a conformal nitride-containing liner is located on at least exposed sidewalls of a patterned gate dielectric material having a dielectric constant of greater than silicon oxide. The conformal nitride-containing liner is a thin layer that is formed using a low temperature (less than 500° C.) nitridation process.