The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jun. 01, 2012
Bhadri Varadarajan, Beaverton, OR (US);
Gengwei Jiang, Lake Oswego, OR (US);
Sirish K. Reddy, Hillsboro, OR (US);
James S. Sims, Tigard, OR (US);
Bhadri Varadarajan, Beaverton, OR (US);
Gengwei Jiang, Lake Oswego, OR (US);
Sirish K. Reddy, Hillsboro, OR (US);
James S. Sims, Tigard, OR (US);
Novellus Systems, Inc., Fremont, CA (US);
Abstract
A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Cascaded ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. Successive UV radiation of equal or shorter wavelengths with variable intensity and duration selectively breaks bonds in the Si—N matrix and minimizes shrinkage and film relaxation. Higher tensile stress than a non-cascaded approach may be obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile