The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8512587 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 20, 2013

Filed:

Jul. 30, 2007
Applicants:

Niraj Rana, Boise, ID (US);

Prashant Raghu, Boise, ID (US);

Kevin Torek, Meridian, ID (US);

Inventors:

Niraj Rana, Boise, ID (US);

Prashant Raghu, Boise, ID (US);

Kevin Torek, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/302 (2006.01); C03C 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Etch solutions for selectively etching doped oxide materials in the presence of silicon nitride, titanium nitride, and silicon materials, and methods utilizing the etch solutions, for example, in construction of container capacitor constructions are provided. The etch solutions are formulated as a mixture of hydrofluoric acid and an organic acid having a dielectric constant less than water, optionally, with an inorganic acid, and a pH of 1 or less.


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