The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2013

Filed:

Sep. 07, 2005
Applicants:

Karl M. Brown, Mountain View, CA (US);

John Pipitone, Livermore, CA (US);

Vineet Mehta, Sunnyvale, CA (US);

Inventors:

Karl M. Brown, Mountain View, CA (US);

John Pipitone, Livermore, CA (US);

Vineet Mehta, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); C23C 14/32 (2006.01); C25B 9/00 (2006.01); C25B 11/00 (2006.01); C25B 13/00 (2006.01); H01B 11/02 (2006.01); H01B 11/06 (2006.01); H02G 3/04 (2006.01); H05K 1/09 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma-enhanced physical vapor deposition method in which VHF power is applied to the sputter target in addition to a D.C. voltage that is also applied to the target, the VHF power level being 3.5 kW or greater, so that the D.C. target power may be reduced to less than 500 W while still attaining a very high ion fraction (in excess of 50%), permitting a very small workpiece-to-target spacing not exceeding a fraction (7/30) of the workpiece diameter to enhance the ionization fraction throughout the process region.


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