The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2013

Filed:

Dec. 15, 2011
Applicants:

Moon-gyu Jeong, Gwangmyeong-si, KR;

Seong-woon Choi, Suwon-si, KR;

Jung Hoon Ser, Seoul, KR;

Inventors:

Moon-Gyu Jeong, Gwangmyeong-si, KR;

Seong-Woon Choi, Suwon-si, KR;

Jung Hoon Ser, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G06F 7/60 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a layout of a photomask includes receiving a layout of a mask pattern, obtaining image parameters of a two-dimensional (2D) layout mask from a simulation, obtaining image parameters of a three-dimensional (3D) layout mask from a simulation, and obtaining differences between the image parameters of the 2D and 3D masks. The differences between the image parameters of the 2D and 3D masks can be compensated by convolving a probability function with respect to an open area, represented by a visible kernel function, with a mask function to produce a first function, convolving a probability function with respect to a blocked area, represented by a visible kernel function, with the mask function to produce a second function, and summing the first function and the second function to produce a compensated vector. The layout of the mask pattern can be corrected using the compensated vector.


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