The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Apr. 01, 2011
Paul D. Ruby, Folsom, CA (US);
Hanmant P. Belgal, El Dorado Hills, CA (US);
Yogesh B. Wakchaure, Folsom, CA (US);
Xin Guo, San Jose, CA (US);
Scott E. Nelson, Vancouver, CA;
Svanhild M. Salmons, Folsom, CA (US);
Paul D. Ruby, Folsom, CA (US);
Hanmant P. Belgal, El Dorado Hills, CA (US);
Yogesh B. Wakchaure, Folsom, CA (US);
Xin Guo, San Jose, CA (US);
Scott E. Nelson, Vancouver, CA;
Svanhild M. Salmons, Folsom, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments of the invention describe a dynamic read reference voltage for use in reading data from non-volatile memory cells. In embodiments of the invention, the read reference voltage is calibrated as the non-volatile memory device is used. Embodiments of the invention may comprise of logic and or modules to read data from a plurality of non-volatile memory cells using a first read reference voltage level (e.g., an initial read reference voltage level whose value is determined by the non-volatile device manufacturer). An Error Checking and Correction (ECC) algorithm is performed to identify whether errors exist in the data as read using the first read reference voltage level. If errors in the data as read are identified, a pre-determined value is retrieved to adjust the first read reference voltage level to a second read reference voltage level.