The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Sep. 21, 2009
Sheng-yi Huang, Hsinchu, TW;
Cheng-chou Hung, Hsinchu, TW;
Tzung-lin LI, Pingtung, TW;
Chin-lan Tseng, Miaoli, TW;
Victor-chiang Liang, Hsinchu, TW;
Chih-yu Tseng, Hsinchu, TW;
Sheng-Yi Huang, Hsinchu, TW;
Cheng-Chou Hung, Hsinchu, TW;
Tzung-Lin Li, Pingtung, TW;
Chin-Lan Tseng, Miaoli, TW;
Victor-Chiang Liang, Hsinchu, TW;
Chih-Yu Tseng, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A radio frequency (RF) device that can achieve high frequency response while maintaining high output impedance and high breakdown voltage includes a substrate, a gate, at least a dummy gate, at least a doped region, a source region and a drain region. The substrate includes a well of first type and a well of second type. The well of second type is adjacent to the well of first type.