The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2013

Filed:

Sep. 29, 2010
Applicants:

Thomas Kieran Nunan, Carlisle, MA (US);

Changhan Yun, San Diego, CA (US);

Christine H. Tsau, Arlington, MA (US);

Inventors:

Thomas Kieran Nunan, Carlisle, MA (US);

Changhan Yun, San Diego, CA (US);

Christine H. Tsau, Arlington, MA (US);

Assignee:

Analog Devices, Inc., Norwood, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of bonding wafers with an aluminum-germanium bond includes forming an aluminum layer on a first wafer, and a germanium layer on a second wafer, and implanting the germanium layer with non-germanium atoms prior to forming a eutectic bond at the aluminum-germanium interface. The wafers are aligned to a desired orientation and the two layers are held in contact with one another. The aluminum-germanium interface is heated to a temperature that allows the interface of the layers to melt, thus forming a bond. A portions of the germanium layer may be removed from the second wafer to allow infrared radiation to pass through the second wafer to facilitate wafer alignment.


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