The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Nov. 16, 2011
Noriaki Ikeda, Tokyo, JP;
Noriaki Ikeda, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
Semiconductor device manufacturing method includes forming a first mask, having a first opening to implant ion into semiconductor substrate and being used to form first layer well, on semiconductor substrate; forming first-layer well having first and second regions by implanting first ion into semiconductor substrate using first mask; forming second mask, having second opening to implant ion into semiconductor substrate and being used to form second layer well, on semiconductor substrate; and forming second-layer well below first layer well by implanting second ion into semiconductor substrate using second mask. First region is formed closer to an edge of first-layer well than second region. Upon implanting first ion, first ion deflected by first inner wall of first mask is supplied to first region. Upon implanting second ion, second ion deflected by second inner wall of second mask is supplied to second region.