The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Jul. 05, 2011
LI Jiang, Shanghai, CN;
Mingqi LI, Shanghai, CN;
Abstract
The invention provides a method for forming a metal gate and a method for forming a MOS transistor. The method for forming a metal gate includes: providing a substrate; forming a sacrificial oxide layer and a polysilicon gate on the substrate; forming a silicon oxide layer on sidewalls of the sacrificial oxide layer and the polysilicon gate; forming a stop layer that covers the substrate; removing a part of the stop layer in the spacers; forming a second interlayer dielectric layer that covers the first interlayer dielectric layer, the spacers and the polysilicon gate; polishing the second interlayer dielectric layer to expose the spacers and the polysilicon gate; removing the polysilicon gate to form a trench; removing the sacrificial oxide layer in the trench; and forming a metal gate in the trench. The invention prevents from recesses and therefore metal bridge and metal residuals in the recesses.