The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
May. 13, 2009
Yasuhiko Tsukamoto, Shiojiri, JP;
Kazuo Shimoyama, Matsumoto, JP;
Yasuhiko Tsukamoto, Shiojiri, JP;
Kazuo Shimoyama, Matsumoto, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
Cutting work is performed on an n-semiconductor substrate () with an inverted trapezoid-shaped dicing blade to form grooves to be a second side walls (). Bottom portions of the grooves are contacted with a p-diffusion layer () which is formed on a first principal plane () (front face) of the n-semiconductor substrate (), so that the p-diffusion layer () is not cut. Then in the second side walls (), a p-isolation layer () connected to a p-collector layer () and the p-diffusion layer () is formed. Since the p-diffusion layer () is not cut, a glass support substrate for supporting a wafer, and expensive adhesive, are not required, and therefore the p-isolation layer () can be formed at low cost.