The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Sep. 09, 2009
Mikiya Ichimura, Nagoya, JP;
Katsuhiro Imai, Nagoya, JP;
Makoto Iwai, Kasugai, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
Yasuo Kitaoka, Suita, JP;
Mikiya Ichimura, Nagoya, JP;
Katsuhiro Imai, Nagoya, JP;
Makoto Iwai, Kasugai, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
Yasuo Kitaoka, Suita, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
A nitride single crystal is produced on a seed crystal substratein a melt containing a flux and a raw material of the single crystal in a growing vessel. The meltin the growing vesselhas temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.