The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Dec. 08, 2011
Fan Chen, Shanghai, CN;
Xiongbin Chen, Shanghai, CN;
Fan Chen, Shanghai, CN;
Xiongbin Chen, Shanghai, CN;
Shanghai Hua Hong Nec Electronics Co., Ltd., Shanghai, CN;
Abstract
A PN-junction varactor in a BiCMOS process is disclosed which comprises an N-type region, a P-type region and N-type pseudo buried layers. Both of the N-type and P-type regions are formed in an active area and contact with each other, forming a PN-junction; the P-type region is situated on top of the N-type region. The N-type pseudo buried layers are formed at bottom of shallow trench field oxide regions on both sides of the active area and contact with the N-type region; deep hole contacts are formed on top of the N-type pseudo buried layers in the shallow trench field oxide regions to pick up the N-type region. A manufacturing method of PN-junction varactor in a BiCMOS process is also disclosed.