The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Oct. 20, 2009
Hiromu Shiomi, Itami, JP;
Kazuhide Sumiyoshi, Osaka, JP;
Yu Saitoh, Itami, JP;
Makoto Kiyama, Osaka, JP;
Hiromu Shiomi, Itami, JP;
Kazuhide Sumiyoshi, Osaka, JP;
Yu Saitoh, Itami, JP;
Makoto Kiyama, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
Provided is a III nitride semiconductor electronic device having a structure capable of reducing leakage current. A laminateincludes a substrateand a III nitride semiconductor epitaxial film. The substrateis made of a III nitride semiconductor having a carrier concentration of more than 1×10cm. The epitaxial structureincludes a III nitride semiconductor epitaxial film. A first faceof the substrateis inclined at an angle θ of more than 5 degrees with respect to an axis Cx extending in a direction of the c-axis. A normal vector VN and a c-axis vector VC make the angle θ. The III nitride semiconductor epitaxial filmincludes first, second and third regionsandarranged in order in a direction of a normal to the first face. A dislocation density of the third regionis smaller than that of the first region. A dislocation density of the second regionis smaller than that of the substrate