The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Feb. 23, 2012
Applicants:
Hisato Yabuta, Machida, JP;
Ayanori Endo, Chigasaki, JP;
Nobuyuki Kaji, Kawasaki, JP;
Ryo Hayashi, Yokohama, JP;
Inventors:
Hisato Yabuta, Machida, JP;
Ayanori Endo, Chigasaki, JP;
Nobuyuki Kaji, Kawasaki, JP;
Ryo Hayashi, Yokohama, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below:≧0.94×(7.1215.9415.675)/()  (1)
Yabuta, Hisato. (2013). Amorphous oxide semiconductor, semiconductor device, thin film transistor and display device (U.S. Patent No. 8502222). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8502222
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile