The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Sep. 17, 2008
Martin Hytch, Toulouse, FR;
Etienne Snoeck, Toulouse, FR;
Florent Houdellier, Calmont, FR;
Florian Hue, Paris, FR;
Martin Hytch, Toulouse, FR;
Etienne Snoeck, Toulouse, FR;
Florent Houdellier, Calmont, FR;
Florian Hue, Paris, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Abstract
A method is provided that includes the steps of i) providing a specimen in the form of a wafer having a measurement area and a reference area, assumed to be without deformations and coplanar with the measurement area; ii) illuminating one face of the specimen with an electron beam (F); iii) superposing a beam (F) of radiation diffracted by the measurement area (B) with a beam (F) of the radiation diffracted by the reference so as to cause these two beams to interfere; iv) measuring the spatial periodicity and the orientation of the fringes of the interference pattern (FI); and v) deducing from this a difference in the lattice parameter and/or the orientation between the reference and measurement areas, which is indicative of a state of deformation of the latter at the nanoscale. A device and system for implementing the method is also provided.