The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Jul. 14, 2010
Eun-ok Lee, Hwaseong-si, KR;
Dae-yong Kim, Yongin-si, KR;
Gil-heyun Choi, Seoul, KR;
Byung-hee Kim, Seoul, KR;
Eun-Ok Lee, Hwaseong-si, KR;
Dae-Yong Kim, Yongin-si, KR;
Gil-Heyun Choi, Seoul, KR;
Byung-Hee Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor memory wiring method includes: receiving a substrate having a cell array region and a peripheral circuit region; depositing a first insulating layer on the substrate; forming a first contact plug in the cell array region, the first contact plug having a first conductive material extending through the first insulating layer; forming a first elongated conductive line at substantially the same time as forming the first contact plug, the first elongated conductive line having the first conductive material directly covering and integrated with the first contact plug; forming a second contact plug in the peripheral circuit region at substantially the same time as forming the first contact plug, the second contact plug having the first conductive material extending through the first insulating layer; and forming a second elongated conductive line at substantially the same time as forming the second contact plug, the second elongated conductive line having the first conductive material directly covering and integrated with the second contact plug.