The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Jul. 13, 2011
Yu-lung Chin, Tainan, TW;
Shang-hui Tu, Tainan, TW;
Shin-cheng Lin, Tainan, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
The invention provides a method for fabricating a deep trench isolation including: providing a substrate; forming a first trench in the substrate; conformally forming a first liner layer on the sidewall and bottom of the first trench; forming a first filler layer on the first liner layer and filling the first trench; forming an epitaxial layer on the substrate and the first trench; forming a second trench through the epitaxial layer and over the first trench; conformally forming a second liner layer on the sidewall and bottom of the second trench; and forming a second filler layer on the second liner layer and filling the second trench.