The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Jan. 11, 2011
Yasuhiro Shimamoto, Tokorozawa, JP;
Jiro Yugami, Yokohama, JP;
Masao Inoue, Ikeda, JP;
Masaharu Mizutani, Itami, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
Jiro Yugami, Yokohama, JP;
Masao Inoue, Ikeda, JP;
Masaharu Mizutani, Itami, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
Manufacturing technique for a semiconductor device having a first MISFET of an n channel-type and a second MISFET of a p channel type, including forming a first insulating film composed of a silicon oxide film or a silicon oxynitride film on a semiconductor substrate for forming a gate insulating film of the respective MISFETs; depositing metal elements on the first insulating film; forming of a silicon film on the first insulating film for the forming of a gate electrode of the respective MISFETs; and producing the respective gate electrodes by patterning the silicon film. The depositing of the metal films on the first insulating film is such that there is produced in the vicinity of the interface between the gate electrode and the gate insulating film a surface density of the metal elements within a range of 1×10to 5×10atoms/cm.