The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Nov. 17, 2011
Jin-gyun Kim, Yongin-si, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Sung-hae Lee, Suwon-si, KR;
Ji-hoon Choi, Seongnam-si, KR;
Jin-Gyun Kim, Yongin-si, KR;
Ki-Hyun Hwang, Seongnam-si, KR;
Sung-Hae Lee, Suwon-si, KR;
Ji-Hoon Choi, Seongnam-si, KR;
Abstract
A vertical memory device may include a substrate, a first selection line on the substrate, a plurality of word lines on the first selection line, a second selection line on the plurality of word lines, and a semiconductor channel. The first selection line may be between the plurality of word lines and the substrate, and the plurality of word lines may be between the first and second selection lines. Moreover, the first and second selection lines and the plurality of word lines may be spaced apart in a direction perpendicular with respect to a surface of the substrate. The semiconductor channel may extend away from the surface of the substrate adjacent sidewalls of the first and second selection lines and the plurality of word lines. In addition, portions of the semiconductor channel adjacent the second selection line may be doped with indium and/or gallium. Related methods are also discussed.