The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Jun. 02, 2010
Applicants:
Alex Kalnitsky, San Francisco, CA (US);
Hsiao-chin Tuan, Judong County, TW;
Kuo-ming Wu, Hsinchu, TW;
Wei Tsung Huang, Hsinchu, TW;
Inventors:
Alex Kalnitsky, San Francisco, CA (US);
Hsiao-Chin Tuan, Judong County, TW;
Kuo-Ming Wu, Hsinchu, TW;
Wei Tsung Huang, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
The process methods and structures mentioned above for creating a trench MOSFET enables self-aligned contacts to be formed to allow decreasing pitch size for trench MOSFET. The self-aligned contacts are formed by etching exposed silicon areas without using lithographical mask and alignment. As a result, the allowance for alignment can be saved and the pitch size can be decreased.