The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Oct. 15, 2012
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Jeffrey Charles Blahnik, Leander, TX (US);
William T. Weaver, Austin, TX (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
An ion source includes arc chamber housing defining an arc chamber. The arc chamber housing has an extraction plate in a fixed position, and the extraction plate defines a plurality of extraction apertures. The ion source also includes a shutter assembly positioned outside of the arc chamber proximate the extraction plate. The shutter assembly is configured to block at least a portion of one of the plurality of extraction apertures during one time interval. The ion source combined with relative movement of a workpiece to be treated with an ion beam extracted from the ion source enables a two dimensional ion implantation pattern to be formed on the workpiece using only one ion source.