The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Jan. 20, 2009
Takahisa Ohno, Tsukuba, JP;
Nobuo Tajima, Tsukuba, JP;
Satoshi Hasaka, Oyama, JP;
Minoru Inoue, Tokyo, JP;
Kaoru Sakoda, Yokohama, JP;
Yoshiaki Inaishi, Kawasaki, JP;
Manabu Shinriki, Kawaguchi, JP;
Kazuhiro Miyazawa, Yokohama, JP;
Takahisa Ohno, Tsukuba, JP;
Nobuo Tajima, Tsukuba, JP;
Satoshi Hasaka, Oyama, JP;
Minoru Inoue, Tokyo, JP;
Kaoru Sakoda, Yokohama, JP;
Yoshiaki Inaishi, Kawasaki, JP;
Manabu Shinriki, Kawaguchi, JP;
Kazuhiro Miyazawa, Yokohama, JP;
National Institute for Materials Science, Tsukuba-shi, Ibaraki, JP;
Taiyo Nippon Sanso Corporation, Tokyo, JP;
Abstract
An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of Rand Rindependently represents one of CH, CH, CH, CH, CH, CH, CH, CH, CH, CHand CH.