The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Apr. 30, 2010
Makoto Kawai, Annaka, JP;
Yuji Tobisaka, Annaka, JP;
Shoji Akiyama, Annaka, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
When a thermal expansion coefficient of a handle substrate is higher than that of a donor substrate, delamination is provided without causing a crack in the substrates. A method for producing a bonded wafer, with at least the steps of: implanting ions into a donor substrate () from a surface thereof to form an ion-implanted interface (); bonding a handle substrate () with a thermal expansion coefficient higher than that of the donor substrate () onto the ion-implanted surface of the donor substrate to provide bonded substrates, subjecting the bonded substrates to a heat treatment to provide an assembly (), and delaminating the donor substrate () of the assembly () at the ion-implanted interface wherein the assembly () has been cooled to a temperature not greater than room temperature by a cooling apparatus (), so that a donor film is transferred onto the handle substrate ().