The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Mar. 24, 2009
Neil Dasgupta, Menlo Park, CA (US);
Friedrich B. Prinz, Woodside, CA (US);
Timothy P. Holme, Menlo Park, CA (US);
Stephen Walch, Fremont, CA (US);
Wonyoung Lee, Stanford, CA (US);
James F. Mack, Palo Alto, CA (US);
Neil Dasgupta, Menlo Park, CA (US);
Friedrich B. Prinz, Woodside, CA (US);
Timothy P. Holme, Menlo Park, CA (US);
Stephen Walch, Fremont, CA (US);
Wonyoung Lee, Stanford, CA (US);
James F. Mack, Palo Alto, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Honda Motor Co., Ltd, Tokyo, JP;
Abstract
Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.