The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Mar. 16, 2011
Ho-jin Lee, Seoul, KR;
Seyoung Jeong, Suwon-si, KR;
Jae-hyun Phee, Incheon, KR;
Jung-hwan Kim, Bucheon-si, KR;
Tae Hong Min, Gumi-si, KR;
Ho-Jin Lee, Seoul, KR;
SeYoung Jeong, Suwon-si, KR;
Jae-hyun Phee, Incheon, KR;
Jung-Hwan Kim, Bucheon-si, KR;
Tae Hong Min, Gumi-si, KR;
Abstract
Provided is a semiconductor device. The semiconductor device may include a substrate and a stacked insulation layer on a sidewall of an opening which penetrates the substrate. The stacked insulation layer can include at least one first insulation layer and at least one second insulation layer whose dielectric constant is different than that of the first insulation layer. One insulation layer may be a polymer and one insulation layer may be a silicon based insulation layer. The insulation layers may be uniform in thickness or may vary as a distance from the substrate changes.