The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Oct. 14, 2010
Cyril Cabral, Jr., Mahopac, NY (US);
John M. Cotte, New Fairfield, CT (US);
Kathryn C. Fisher, Brooklyn, NY (US);
Laura L. Kosbar, Mohegan Lake, NY (US);
Christian Lavoie, Pleasantville, NY (US);
Zhu Liu, Kunming, CN;
Xiaoyan Shao, Yorktown Heights, NY (US);
Cyril Cabral, Jr., Mahopac, NY (US);
John M. Cotte, New Fairfield, CT (US);
Kathryn C. Fisher, Brooklyn, NY (US);
Laura L. Kosbar, Mohegan Lake, NY (US);
Christian Lavoie, Pleasantville, NY (US);
Zhu Liu, Kunming, CN;
Xiaoyan Shao, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated in, for example, CMOS devices, MEM (micro-electro-mechanical) devices, and photovoltaic cells.