The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Oct. 14, 2009
Naruhisa Miura, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Shoyu Watanabe, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Shoyu Watanabe, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
In a semiconductor device according to the present invention, a p-type well region disposed in an outer peripheral portion of the power semiconductor device is divided into two parts, that is, an inside and an outside, and a field oxide film having a greater film thickness than the gate insulating film is provided on a well region at the outside to an inside of an inner periphery of the well region. Therefore, it is possible to prevent, in the gate insulating film, a dielectric breakdown due to the voltage generated by the flow of the displacement current in switching.