The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Jan. 20, 2012
Chih-chung Wang, Hsinchu, TW;
Ming-tsung Lee, Yilan County, TW;
Chung-i Huang, Tainan, TW;
Shan-shi Huang, Hsinchu, TW;
Wen-fang Lee, Hsinchu, TW;
Te-yuan Wu, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
Ming-Tsung Lee, Yilan County, TW;
Chung-I Huang, Tainan, TW;
Shan-Shi Huang, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Te-Yuan Wu, Hsinchu, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A HV MOSFET device includes a substrate, a deep well region, a source/body region, a drain region, a gate structure, and a first doped region. The deep well region includes a boundary site and a middle site. The source/body region is formed in the deep well region and defines a channel region. The first doped region is formed in the deep well region and disposed under the gate structure, and having the first conductivity type. There is a first ratio between a dopant dose of the first doped region and a dopant dose of the boundary site of the deep well region. There is a second ratio between a dopant dose of the first doped region and a dopant dose of the middle site of the deep well region. A percentage difference between the first ratio and the second ratio is smaller than or equal to 5%.