The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2013

Filed:

Oct. 25, 2010
Applicants:

Jae-young Choi, Suwon-si, KR;

Hyeon-jin Shin, Suwon-si, KR;

Seon-mi Yoon, Yongin-si, KR;

Won-mook Choi, Hwaseong-si, KR;

Inventors:

Jae-young Choi, Suwon-si, KR;

Hyeon-jin Shin, Suwon-si, KR;

Seon-mi Yoon, Yongin-si, KR;

Won-mook Choi, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A transistor includes at least three terminals comprising a gate electrode, a source electrode and a drain electrode, an insulating layer disposed on a substrate, and a semiconductor layer disposed on the substrate, wherein a current which flows between the source electrode and the drain electrode is controlled by application of a voltage to the gate electrode, where the semiconductor layer includes a graphene layer and at least one of a metal atomic layer and a metal ion layer, and where the metal atomic layer or the metal ion layer is interposed between the graphene layer and the insulating layer.


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