The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8492243 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 23, 2013

Filed:

Jan. 21, 2009
Applicants:

Maik Haeberlen, Cambridge, GB;

Brian Murphy, Pfarrkirchen, DE;

Inventors:

Maik Haeberlen, Cambridge, GB;

Brian Murphy, Pfarrkirchen, DE;

Assignee:

Siltronic AG, Munich, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor structures are produced by providing a 3C—SiC semiconductor layer containing a monocrystalline 3C—SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C—SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity ≧80% or being substantially transparent.


Find Patent Forward Citations

Haeberlen, Maik. (2013). Method for the production of a semiconductor structure (U.S. Patent No. 8492243). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8492243

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