The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Jan. 12, 2012
Xuesong Rao, Singapore, SG;
Chim Seng Seet, Singapore, SG;
Hai Cong, Singapore, SG;
Zheng Zou, Singapore, SG;
Alex See, Singapore, SG;
Yun Ling Tan, Singapore, SG;
Wen Zhan Zhou, Singapore, SG;
Lup San Leong, Singapore, SG;
Huang Liu, Singapore, SG;
Xuesong Rao, Singapore, SG;
Chim Seng Seet, Singapore, SG;
Hai Cong, Singapore, SG;
Zheng Zou, Singapore, SG;
Alex See, Singapore, SG;
Yun Ling Tan, Singapore, SG;
Wen Zhan Zhou, Singapore, SG;
Lup San Leong, Singapore, SG;
Huang Liu, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
Interlayer dielectric gap fill processes are enhanced by forming gate spacers with a step-like or tapered profile. Embodiments include forming a gate electrode on a substrate, depositing a spacer material over the gate electrode, etching the spacer material to form a first spacer on each side of the gate electrode, and pulling back the first spacers to form second spacers which have a step-like profile. Embodiments further include depositing a second spacer material over the gate electrode and the second spacers, and etching the second spacer material to form a third spacer on each second spacer, the second and third spacers forming an outwardly tapered composite spacer.