The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Nov. 03, 2010
Applicants:
Dev Alok Girdhar, Indialantic, FL (US);
Francois Hebert, San Mateo, CA (US);
Inventors:
Dev Alok Girdhar, Indialantic, FL (US);
Francois Hebert, San Mateo, CA (US);
Assignee:
Intersil Americas Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and structure for a voltage converter including a trench field effect transistor (FET) and a trench guarded Schottky diode which is integrated with the trench FET. In an embodiment, a voltage converter can include a lateral FET, a trench FET, and a trench guarded Schottky diode integrated with the trench FET. A method to form a voltage converter can include the formation of a trench FET gate, a trench guarded Schottky diode gate, and a lateral FET gate using a single conductive layer such as a polysilicon layer.