The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Mar. 28, 2012
Yung-fa Lin, Hsinchu, TW;
Shou-yi Hsu, Hsinchu County, TW;
Meng-wei Wu, Hsinchu, TW;
Chia-hao Chang, Hsinchu, TW;
Yung-Fa Lin, Hsinchu, TW;
Shou-Yi Hsu, Hsinchu County, TW;
Meng-Wei Wu, Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Anpec Electronics Corporation, Hsinchu Science, Hsin-Chu, TW;
Abstract
A method for fabricating a power semiconductor device is provided. A substrate with a first conductivity type is prepared. A semiconductor layer with a second conductivity type is formed on the substrate. A hard mask pattern having at least an opening is formed on the semiconductor layer. A first trench etching is performed to form a first recess in the semiconductor layer via the opening. A first ion implantation is performed to vertically implant dopants into the bottom of the first recess via the opening, thereby forming a first doping region. A second trench etching is performed to etch through the first doping region, thereby forming a second recess.