The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Apr. 28, 2009
Chia-chen Chen, Fishkill, NY (US);
Wu-song Huang, Brewster, NY (US);
Wai-kin LI, Beacon, NY (US);
Chandrasekhar Sarma, Poughkeepsie, NY (US);
Chia-Chen Chen, Fishkill, NY (US);
Wu-Song Huang, Brewster, NY (US);
Wai-Kin Li, Beacon, NY (US);
Chandrasekhar Sarma, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Infineon Technologies AG, Neubiberg, DE;
Abstract
A second photoresist having a second photosensitivity is formed on a substrate. A first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on the second photoresist. Preferably, the first photoresist is a gray resist that becomes transparent upon exposure. At least one portion of the first photoresist is lithographically exposed employing a first reticle having a first pattern to form at least one transparent lithographically exposed resist portion, while the second photoresist remains intact. The second photoresist is lithographically exposed employing a second reticle including a second pattern to form a plurality of lithographically exposed shapes in the second photoresist. The plurality of lithographically exposed shapes have a composite pattern which is the derived from the second pattern by limiting the second pattern only within the area of the at least one transparent lithographically exposed resist pattern.