The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Oct. 03, 2011
Kunliang Zhang, Fremont, CA (US);
Min LI, Fremont, CA (US);
Yuchen Zhou, San Jose, CA (US);
Soichi Oikawa, Hachioji, JP;
Hitoshi Iwasaki, Tokyo, JP;
Kenichiro Yamada, Tokyo, JP;
Katsuhiko Koui, Yokohama, JP;
Kunliang Zhang, Fremont, CA (US);
Min Li, Fremont, CA (US);
Yuchen Zhou, San Jose, CA (US);
Soichi Oikawa, Hachioji, JP;
Hitoshi Iwasaki, Tokyo, JP;
Kenichiro Yamada, Tokyo, JP;
Katsuhiko Koui, Yokohama, JP;
TDK Corporation, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of FeCowhere v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)where x is between 5 and 50.